A high density FinFET Dielectric RRAM (FIND RRAM) is firstly developed in fully compatible 7nm FinFET CMOS logic process without additional masks or process steps. The high density embedded 7nm FIND RRAM cell has a unit cell area of 0.063um 2 , which consists of a 7nm nFinFET (WL) in series of a tiny high-K gate dielectric resistive switch node. The 7nm embedded HfO 2 -based FIND RRAM performs very excellent metrics in high-speed operation, stable readout window, and superior reliability in endurance and retention. Besides, the NOR-type array arrangement has superior disturb window and overwriting immunity for various embedded IP configurations. Moreover, the highly scalable embedded FIND RRAM cell can be further adapted to 5nm and beyond for boosting the memory density, performance, and operation voltages, which all lead the 7nm FinFET RRAM technology to be a promising FinFET memory solution in advanced embedded applications.
- High Density 7nm FinFET Dielectric RRAM in Embedded Memory Applications
- Pin-Hsuan Shih - Institute of Electronics Engineering, National Tsing Hua University (NTHU),TaiwanWei-Hwa Lin - Taiwan Semiconductor Manufacturing Company (Taiwan)Yue-Der Chih - Taiwan Semiconductor Manufacturing Company (TSMC),Design Technology Platform (DTP),TaiwanEric Wang - Taiwan Semiconductor Manufacturing Company (Taiwan)Jonathan Chang - Taiwan Semiconductor Manufacturing Company (Taiwan)Ya-Chin King - National Tsing Hua University, College of Semiconductor ResearchChrong Jung Lin - National Tsing Hua University, College of Semiconductor Research
- 2025 Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (Kyoto, Japan, 08/06/2025–12/06/2025)
- JSAP
- Taiwan Semiconductor Manufacturing Company (10.13039/501100004368)
- Conference paper
- 08/06/2025
- Digest of technical papers - Symposium on VLSI Technology
- English