High Performance Ge FinFET CMOS Invertor with ION=2.0 mA/ m at VOV=1V,S.S.=64 mV/dec,ION/IOFF=2.5 106, and Voltage Gain=90 V/V by Using High Pressure Supercritical Fluid Hydroxide Oxidation

Cheng-Yu Wu; Dun-Bao Ruan; Kuei-Shu Chang-Liao; Yao-Jen Lee; Yu-Chuan Chiu; Chih-Wei Liu; Guan-Ting Liu; Bo-Lien Kuo; Kai-Chun Yang; Cheng-Han Li; Po-Tsun Liu

doi:10.23919/SNW57900.2023.10183924

Conference paper

High Performance Ge FinFET CMOS Invertor with ION=2.0 mA/ m at VOV=1V,S.S.=64 mV/dec,ION/IOFF=2.5 106, and Voltage Gain=90 V/V by Using High Pressure Supercritical Fluid Hydroxide Oxidation

Cheng-Yu Wu, Dun-Bao Ruan, Kuei-Shu Chang-Liao, Yao-Jen Lee, Yu-Chuan Chiu, Chih-Wei Liu, Guan-Ting Liu, Bo-Lien Kuo, Kai-Chun Yang, Cheng-Han Li, …

2023 Silicon Nanoelectronics Workshop, SNW 2023, pp.23-24

2023

DOI: https://doi.org/10.23919/SNW57900.2023.10183924

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A high performance Ge FinFET CMOS invertor with ION=2mA/ m at VOV =1V,S.S.=64mV/dec,ION/IOFF=2.5 106 , and voltage gain=90 V/V is achieved by a high pressure supercritical fluid hydroxide oxidation, due to the reduced unstable oxidation states and oxygen vacancy.

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Title: High Performance Ge FinFET CMOS Invertor with ION=2.0 mA/ m at VOV=1V,S.S.=64 mV/dec,ION/IOFF=2.5 106, and Voltage Gain=90 V/V by Using High Pressure Supercritical Fluid Hydroxide Oxidation
Translated title: High Performance Ge FinFET CMOS Invertor with ION=2.0 mA/ m at VOV=1V,S.S.=64 mV/dec,ION/IOFF=2.5 106, and Voltage Gain=90 V/V by Using High Pressure Supercritical Fluid Hydroxide Oxidation
Creators - without role: Cheng-Yu Wu - National Tsing Hua University , Department of Engineering and System Science
Dun-Bao Ruan - Fuzhou University
Kuei-Shu Chang-Liao - National Tsing Hua University , Department of Engineering and System Science
Yao-Jen Lee - Taiwan Semiconductor Research Institute
Yu-Chuan Chiu - National Yang Ming Chiao Tung University
Chih-Wei Liu - National Tsing Hua University , Department of Engineering and System Science
Guan-Ting Liu - National Tsing Hua University , Department of Engineering and System Science
Bo-Lien Kuo - National Tsing Hua University
Kai-Chun Yang - National Tsing Hua University , Department of Engineering and System Science
Cheng-Han Li - National Tsing Hua University
Po-Tsun Liu - National Yang Ming Chiao Tung University
Publication Details: 2023 Silicon Nanoelectronics Workshop, SNW 2023, pp.23-24
Identifiers: 9784863488083; 9957772359006774
Academic Unit: Institute of Nuclear Engineering and Science, College of Nuclear Science, National Tsing Hua University
Language: English
Resource Type: Conference paper

High Performance Ge FinFET CMOS Invertor with ION=2.0 mA/ m at VOV=1V,S.S.=64 mV/dec,ION/IOFF=2.5 106, and Voltage Gain=90 V/V by Using High Pressure Supercritical Fluid Hydroxide Oxidation

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