High Performance Ge pMOSFETs with Minimized Ge+1 and Ge+2 in GeOx Interfacial Layer

Conference paper

High Performance Ge pMOSFETs with Minimized Ge+1 and Ge+2 in GeOx Interfacial Layer

Jiayi Huang, Shih-Han Yi, Chia-Wei Hsu, Tzung-Yu Wu and Kuei-Shu Chang-Liao

2016

Abstract

Ge pMOSFETs;Minimized Ge+1;Ge+2;GeOx Interfacial Layer

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Title: High Performance Ge pMOSFETs with Minimized Ge+1 and Ge+2 in GeOx Interfacial Layer
Creators - without role: Jiayi Huang
Shih-Han Yi
Chia-Wei Hsu
Tzung-Yu Wu
Kuei-Shu Chang-Liao - 國立清華大學原子科學院工程與系統科學系
Identifiers: 9957768327106774
Academic Unit: Institute of Nuclear Engineering and Science, College of Nuclear Science, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper