High Performance HfOX Based Resistive Memory with Sub-Nanosecond Switching Speed and Excellent Endurance

Conference paper

C. H. Lien, Y. S. Chen, H. Y. Lee, P. S. Chen, F. T. Chen and M.-J. Tsai

China Semiconductor Technology International Conference (CSTIC 2011)

2011

Abstract

HfOX;Sub-Nanosecond

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Title: High Performance HfOX Based Resistive Memory with Sub-Nanosecond Switching Speed and Excellent Endurance
Creators - without role: C. H. Lien - 國立清華大學電機資訊學院電機工程學系
Y. S. Chen
H. Y. Lee
P. S. Chen
F. T. Chen
M.-J. Tsai
Identifiers: 9957774955506774
Academic Unit: College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper
Publication Details: China Semiconductor Technology International Conference (CSTIC 2011)