High Performance WSe                         2                          Transistors with Multilayer Graphene Source/Drain

Chenhsin Lien; Hao-Ling Tang; Ming-Hui Chiu; Kuan-Jhih Hou; Shih-Hsien Yang; Jhih-Fong Su; Yen-Fu Lin; Lain-Jong Li

doi:10.1109/ICSICT.2018.8565030

Back

Conference paper

High Performance WSe 2 Transistors with Multilayer Graphene Source/Drain

Chenhsin Lien, Hao-Ling Tang, Ming-Hui Chiu, Kuan-Jhih Hou, Shih-Hsien Yang, Jhih-Fong Su, Yen-Fu Lin and Lain-Jong Li

2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings, 8565030

12/2018

DOI: https://doi.org/10.1109/ICSICT.2018.8565030

Abstract

Graphene

raised source/drain

WSe 2

Electrical and Electronic Engineering

P-channel WSe FETs along with multilayer graphene source/drain (S/D) are demonstrated by the CVD growth of the WSe monolayer to the patterned graphene. Multilayer graphene (MLG) is adopted to reduce contact resistance while the monolayer WSe served as the channel for the electrostatics integrity of the FET. Furthermore, by increasing the p-type doping concentration of the graphene S/D, the I /I ratio can be enhanced to 10 and the unipolar p-channel characteristics are retained regardless the choice of the work function of the metal used for the S/D contact.

Metrics

1 Record Views

Details

Title: High Performance WSe 2 Transistors with Multilayer Graphene Source/Drain
Translated title: High Performance WSe 2 Transistors with Multilayer Graphene Source/Drain
Creators - without role: Chenhsin Lien - National Tsing Hua University
Hao-Ling Tang - Institute of Electronics Engineering , National Tsing Hua University
Ming-Hui Chiu - Physical Science and Engineering Division , King Abdullah University of Science Technology (KAUST)
Kuan-Jhih Hou - National Tsing Hua University
Shih-Hsien Yang - Institute of Electronics Engineering , National Tsing Hua University
Jhih-Fong Su - Institute of Electronics Engineering , National Tsing Hua University
Yen-Fu Lin - Department of Physics , National Chung Hsing University
Lain-Jong Li - Corporate Research and Chief Technology Office , Taiwan Semiconductor Manufacturing Company
Identifiers: 9781538644409; 9957773686406774
Academic Unit: College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: English
Resource Type: Conference paper
Publication Details: 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings, 8565030

High Performance WSe 2 Transistors with Multilayer Graphene Source/Drain

Abstract

Related links

Metrics

Details

National Tsing Hua University Social media