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High Quality La2O3 and Al2O3 Gate Dielectrics with Equivalent Oxide Thickness 5-10Å
Conference paper   Open access

High Quality La2O3 and Al2O3 Gate Dielectrics with Equivalent Oxide Thickness 5-10Å

A. Chin, Y.H. Wu, S.B. Chen, C.C. Liao and W.J. Chen
Symp. on VLSI Tech. Symp. on VLSI Tech., pp.16-17
2000
DOI: https://doi.org/10.1109/VLSIT.2000.852751

Abstract

High K dielectric materials;Leakage current;High-K gate dielectrics;Artificial intelligence;Annealing;Thermal stability;Temperature;Amorphous materials;Dielectric measurements;Crystallization
High quality La/sub 2/O/sub 3/ and Al/sub 2/O/sub 3/ are fabricated with EOT of 4.8 and 9.6 /spl Aring/, leakage current of 0.06 and 0.4 A/cm/sup -2/ and D/sub it/ of both 3/spl times/10/sup 10/ eV/sup -1//cm/sup 2/, respectively. The high K is further evidenced from high MOSFET's I/sub d/ and g/sub m/ with low I/sub OFF/. Good SILC and Q/sub BD/ are obtained and comparable with SiO/sub 2/. The low EOT is due to the high thermodynamic stability in contact with Si and stable after H/sub 2/ annealing up to 550/spl deg/C.
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