High Tunneling Efficiency of PECVD Silicon Rich Oxide (SRO) for the Application in Low Voltage Flash EEPROM

Conference paper

C.J. Lin, C.C.-H. Hsu, H.H. Chen and G. Hong

SEMI Taiwan IC Technical Conference

1995

Abstract

PECVD;Silicon Rich Oxide;Voltage;EEPROM

1 Record Views

Title: High Tunneling Efficiency of PECVD Silicon Rich Oxide (SRO) for the Application in Low Voltage Flash EEPROM
Creators - without role: C.J. Lin - 國立清華大學電機資訊學院電機工程學系
C.C.-H. Hsu
H.H. Chen
G. Hong
Publication Details: SEMI Taiwan IC Technical Conference
Identifiers: 9957776291406774
Academic Unit: Institute of Electronics Engineering, College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper