- Title
- High breakdown GaN Schottky diodes with buried P-layer structure
- Creators - without role
- Y. LianY. LinS. Hsu - 國立清華大學電機資訊學院電機工程學系
- Publication Details
- 2009 International Conference on Solid State Devices and Materials (SSDM)
- Identifiers
- 9957769929806774
- Academic Unit
- College of Electrical Engineering and Computer Science, National Tsing Hua University
- Language
- Traditional Chinese
- Resource Type
- Conference paper
Conference paper
High breakdown GaN Schottky diodes with buried P-layer structure
2009 International Conference on Solid State Devices and Materials (SSDM)
2009
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