High-density (4.4F2) NAND flash technology using Super-Shallow Channel Profile (SSCP) engineering

F. Arai; N. Arai; S. Satoh; T. Yaegashi; E. Kamiya; Y. Matsunaga; Y. Takeuchi; H. Kamata; A. Shimizu; N. Ohtani; N. Kai; S. Takahashi; W. Moriyama; K. Kugimiya; S. Miyazaki; T. Hirose; H. Meguro; K. Hatakeyama; K. Shimizu; R. Shirota

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Conference paper

High-density (4.4F2) NAND flash technology using Super-Shallow Channel Profile (SSCP) engineering

F. Arai, N. Arai, S. Satoh, T. Yaegashi, E. Kamiya, Y. Matsunaga, Y. Takeuchi, H. Kamata, A. Shimizu, N. Ohtani, …

Technical Digest - International Electron Devices Meeting, pp.775-778

2000

Appears in keyword about Physics

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Electronic

Optical and Magnetic Materials

Condensed Matter Physics

Electrical and Electronic Engineering

Materials Chemistry

This paper describes a novel high-density 4.4F ² (F: feature size) NAND flash memory with the cell size of O.074um ² for O.13um design rule. To minimize the cell size, two key technologies are introduced as follows. (1) The Super-Shallow Channel Profile (SSCP) engineering and (2) a novel layout of the NAND string that consists of 32 cells. The NAND cells fabricated by the above technologies have demonstrated good cell characteristics. This 4.4F ² NAND flash technology is highly advantageous for low cost flash memories of 4Gbit and beyond for mass storage applications.

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Title: High-density (4.4F2) NAND flash technology using Super-Shallow Channel Profile (SSCP) engineering
Translated title: High-density (4.4F2) NAND flash technology using Super-Shallow Channel Profile (SSCP) engineering
Creators - without role: F. Arai - Memory LSI Res. and Devmt. Center , Semiconductor Company , Toshiba Corporation
N. Arai - Memory LSI Res. and Devmt. Center , Semiconductor Company , Toshiba Corporation
S. Satoh - Memory LSI Res. and Devmt. Center , Semiconductor Company , Toshiba Corporation
T. Yaegashi - Memory LSI Res. and Devmt. Center , Semiconductor Company , Toshiba Corporation
E. Kamiya - Memory LSI Res. and Devmt. Center , Semiconductor Company , Toshiba Corporation
Y. Matsunaga - Memory LSI Res. and Devmt. Center , Semiconductor Company , Toshiba Corporation
Y. Takeuchi - Memory LSI Res. and Devmt. Center , Semiconductor Company , Toshiba Corporation
H. Kamata - Memory LSI Res. and Devmt. Center , Semiconductor Company , Toshiba Corporation
A. Shimizu - Memory LSI Res. and Devmt. Center , Semiconductor Company , Toshiba Corporation
N. Ohtani - Memory LSI Res. and Devmt. Center , Semiconductor Company , Toshiba Corporation
N. Kai - Memory LSI Res. and Devmt. Center , Semiconductor Company , Toshiba Corporation
S. Takahashi - Memory LSI Res. and Devmt. Center , Semiconductor Company , Toshiba Corporation
W. Moriyama - Memory LSI Res. and Devmt. Center , Semiconductor Company , Toshiba Corporation
K. Kugimiya - Memory LSI Res. and Devmt. Center , Semiconductor Company , Toshiba Corporation
S. Miyazaki - Memory LSI Res. and Devmt. Center , Semiconductor Company , Toshiba Corporation
T. Hirose - Memory LSI Res. and Devmt. Center , Semiconductor Company , Toshiba Corporation
H. Meguro - Memory LSI Res. and Devmt. Center , Semiconductor Company , Toshiba Corporation
K. Hatakeyama - Memory LSI Res. and Devmt. Center , Semiconductor Company , Toshiba Corporation
K. Shimizu - Memory LSI Res. and Devmt. Center , Semiconductor Company , Toshiba Corporation
R. Shirota - Memory LSI Res. and Devmt. Center , Semiconductor Company , Toshiba Corporation
Publication Details: Technical Digest - International Electron Devices Meeting, pp.775-778
Identifiers: 9957769159406774
Academic Unit: College of Semiconductor Research, National Tsing Hua University
Language: English
Resource Type: Conference paper

High-density (4.4F2) NAND flash technology using Super-Shallow Channel Profile (SSCP) engineering

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