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High density NAND EEPROM with block-page programming for microcomputer applications
Conference paper

High density NAND EEPROM with block-page programming for microcomputer applications

Masaki Momodomi, Yoshihisa Iwata, Tomoharu Tanaka, Yasuo Itoh, Riichiro Shirota and Fujio Masuoka
Proceedings of the Custom Integrated Circuits Conference
05/1989

Abstract

Electrical and Electronic Engineering
A 5-V-only 4-Mb NAND EEPROM (electrically erasable programmable read-only memory) has been successfully developed. The EEPROM has on-chip high-voltage generators, so the system needs only a 5-V power supply. The block-page erase/program mode realizes high-speed programming. On-chip test circuits provide high reliability. The NAND EEPROM has many applications for compact microcomputer systems, which need large storage systems with low power consumption.

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