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High electron mobility InAsSb grown on inp using Sb surfactant
Conference paper

High electron mobility InAsSb grown on inp using Sb surfactant

Chichih Liao, Bing-Ruey Wu and KEH-YUNG CHENG
Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 4702922
2008
DOI: https://doi.org/10.1109/ICIPRM.2008.4702922

Abstract

Electron mobility High electron mobility transistor Molecular bean epitaxy Surfactant
High electron mobility and low defect density InAsSb lattice-matched to AlSb has been successfully grown on InP substrates by gas source molecular beam epitaxy using a Sb surfactant buffer layer structure. High electron mobility transistors based on this heterostructure have been demonstrated.

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