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High performance Ge pMOSFETs with simultaneous mobility-412 cm2/V-s, EOT -0.5 nm, Ion/Ioff∼105, gate leakage∼10-4 A/cm2 by modulating interfacial layer using oxygen deficient HfOx
Conference paper

High performance Ge pMOSFETs with simultaneous mobility-412 cm2/V-s, EOT -0.5 nm, Ion/Ioff∼105, gate leakage∼10-4 A/cm2 by modulating interfacial layer using oxygen deficient HfOx

Shih-Han Yi, Jiayi Huang, Chia-Wei Hsu, Tzung-Yu Wu, Dun-Bao Ruan and Kuei-Shu Chang-Liao
2017 Silicon Nanoelectronics Workshop, SNW 2017, Vol.2017-January, pp.11-12
12/2017
DOI: https://doi.org/10.23919/SNW.2017.8242272

Abstract

Electrical and Electronic Engineering Electronic Optical and Magnetic Materials
A high peak hole mobility of 412 cm 2 /V-sec at Ninv=1.8×10 12 cm -2 , a very low Jg of ∼10 -4 A/cm 2 at V g =V fb +1 V and an ultralow EOT of 0.53 nm in Ge pMOSFETs are simultaneously achieved by high-k/0D-HKVGe02 gate stack with suitable treatments. The content of Ge +1 and Ge +2 in GeO x layer are re-oxidized to higher oxidation state by gettered oxygen, which is captured by OD-HfOx from GeO x . The proposed gate stack is promising for Ge MOSFET.

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