Abstract
This letter introduces the nanoscale gate-all-around (GAA) n-MOS polycrystalline silicon thin-film transistors (poly-Si TFTs) by using microwave annealing (MWA) [1]-[3]. Experimental results of MWA GAA poly-Si TFTs exhibit high performance—with subthreshold slope (SS) of 105 mV/dec. and Ion/Ioff ratio exceeding 107. MWA reveals the sufficient dopant activation efficiency and equivalent to rapid thermal annealing (RTA). Additionally, the short channel effect is reduced owing to the low temperature process of MWA and superior gate control of GAA structure. The proposed MWA GAA poly-Si TFT with high performance and low temperature process is promising for advanced 3D ICs.