High performance ultra-thin body (2.4nm) poly-Si junctionless thin film transistors with a trench structure

Mu-Shih Yeh; Yung-Chun Wu; Min-Hsin Wu; Yi-Ruei Jhan; Ming-Hsien Chung; Min-Feng Hung

doi:10.1109/IEDM.2014.7047115

會議論文

High performance ultra-thin body (2.4nm) poly-Si junctionless thin film transistors with a trench structure

Mu-Shih Yeh, Yung-Chun Wu, Min-Hsin Wu, Yi-Ruei Jhan, Ming-Hsien Chung 和 Min-Feng Hung

Technical Digest - International Electron Devices Meeting, IEDM, 卷.2015-February(February), 頁碼.26.6.1-26.6.4

20/02/2015

DOI: https://doi.org/10.1109/IEDM.2014.7047115

Web of Science ID: WOS:000370384800153

摘要

The novel trench junctionless poly-Si thin-film transistor (trench JL-TFT) with ultra-thin body (2.4 nm) is utilized to simple dry etching process. This novel devices show excellent performance in terms of steep SS (99 mV/dec.) and high I<inf>ON</inf>/I<inf>OFF</inf> (>10<sup>7</sup>). The I<inf>ON</inf> current of the ultra-thin body (UTB) JL-TFT is increased by quantum confined effect.

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題名: High performance ultra-thin body (2.4nm) poly-Si junctionless thin film transistors with a trench structure
創作者：: Mu-Shih Yeh (作者) - National Tsing Hua University
Yung-Chun Wu (作者) - Department of Engineering and System Science, National Tsing Hua University
Min-Hsin Wu (作者) - National Tsing Hua University
Yi-Ruei Jhan (作者) - Department of Engineering and System Science, National Tsing Hua University
Ming-Hsien Chung (作者) - National Tsing Hua University
Min-Feng Hung (作者) - National Tsing Hua University
學術資源類型: 會議論文
出版日期: 20/02/2015
出版資訊: Technical Digest - International Electron Devices Meeting, IEDM, 卷.2015-February(February), 頁碼.26.6.1-26.6.4
語言: 英語

High performance ultra-thin body (2.4nm) poly-Si junctionless thin film transistors with a trench structure

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