High performance ultra-thin body (2.4nm) poly-Si junctionless thin film transistors with a trench structure

Mu-Shih Yeh; Yung-Chun Wu; Min-Hsin Wu; Yi-Ruei Jhan; Ming-Hsien Chung; Min-Feng Hung

doi:10.1109/IEDM.2014.7047115

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High performance ultra-thin body (2.4nm) poly-Si junctionless thin film transistors with a trench structure

Mu-Shih Yeh, Yung-Chun Wu, Min-Hsin Wu, Yi-Ruei Jhan, Ming-Hsien Chung and Min-Feng Hung

Technical Digest - International Electron Devices Meeting, IEDM, Vol.2015-February(February), pp.26.6.1-26.6.4

20/02/2015

DOI: https://doi.org/10.1109/IEDM.2014.7047115

Abstract

The novel trench junctionless poly-Si thin-film transistor (trench JL-TFT) with ultra-thin body (2.4 nm) is utilized to simple dry etching process. This novel devices show excellent performance in terms of steep SS (99 mV/dec.) and high I<inf>ON</inf>/I<inf>OFF</inf> (>10<sup>7</sup>). The I<inf>ON</inf> current of the ultra-thin body (UTB) JL-TFT is increased by quantum confined effect.

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Title: High performance ultra-thin body (2.4nm) poly-Si junctionless thin film transistors with a trench structure
Creators - without role: Mu-Shih Yeh - National Tsing Hua University
Yung-Chun Wu - Department of Engineering and System Science, National Tsing Hua University
Min-Hsin Wu - National Tsing Hua University
Yi-Ruei Jhan - Department of Engineering and System Science, National Tsing Hua University
Ming-Hsien Chung - National Tsing Hua University
Min-Feng Hung - National Tsing Hua University
Publication Details: Technical Digest - International Electron Devices Meeting, IEDM, Vol.2015-February(February), pp.26.6.1-26.6.4
Identifiers: 9957774360106774
Academic Unit: Institute of Nuclear Engineering and Science, College of Nuclear Science, National Tsing Hua University
Language: English
Resource Type: Conference paper

High performance ultra-thin body (2.4nm) poly-Si junctionless thin film transistors with a trench structure

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