- Title
- High quality GaInP grown by gas source molecular beam epitaxy
- Creators - without role
- K. Y. ChengJ. N. BaillargeonK. C. HsiehD. W. NamE. VeselyG. E. FernandezN. HolonyakR. J. Fu
- Publication Details
- 1990 Electronic Materials Conference
- Identifiers
- 9957770050706774
- Academic Unit
- National Tsing Hua University
- Language
- Traditional Chinese
- Resource Type
- Conference paper
Conference paper
High quality GaInP grown by gas source molecular beam epitaxy
1990 Electronic Materials Conference
1990
Related links
Metrics
1 Record Views