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High-resolution microfabricated Vernier-type displacement sensor using suspended gate field-effect transistors
Conference paper   Peer reviewed

High-resolution microfabricated Vernier-type displacement sensor using suspended gate field-effect transistors

Jo-Han Hsu, Max Ti-Kuang Hou and Rongshun Chen
Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol.10(1), 011502
2011

Abstract

displacement sensing suspended gate Vernier scale
In this paper, a high resolution Vernier-type displacement sensing mechanism is proposed by utilizing Vernier-type suspended gate field-effect transistors (SGFETs), The field-effect transistor benefits from its linear output signal and simple structure, and the concept of Vernier gate is used to enhance the resolution. The displacement of the comb-drive actuator is sensed via the output drain current of SGFET. Design and analysis for Vernier-type suspended gate were presented and some characteristics of the Vernier-type SGFETs were also discussed in simulation results. © 2011 Society of Photo-Optical Instrumentation Engineers (SPIE).

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