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High sensitivity and high S/N microphone achieved by PZT film with central-circle electrode design
Conference paper

High sensitivity and high S/N microphone achieved by PZT film with central-circle electrode design

J.-L. Huang, S.-C. Lo, J.-J. Wang, C.-E. Lu, S.-H. Tseng, M.-C. Wu and W. Fang
Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), pp.1188-1191
02/2017
DOI: https://doi.org/10.1109/MEMSYS.2017.7863628
Appears in  keyword about Physics

Abstract

Electronic Optical and Magnetic Materials Condensed Matter Physics Mechanical Engineering Electrical and Electronic Engineering
This study based on piezo-electric sensing principle to develop a high S/N ratio MEMS microphone. The patterned PZT and electrodes designed implemented above the clamped diaphragm to generate high stress concentration on PZT and Si bimorph diaphragm. The proposed central-circle electrode design can induce more charge than the edge-surrounded electrode design (served as the reference design). The proposed design also provides a smooth stress distribution across electrode to tolerate more process variation such as offset from double-side alignment and boundary change by DRIE undercut. The measured results demonstrate the S/N is about 64dB (reference design: 53dB) for the piezo-electric microphone.

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