Abstract
A high speed Si modulator with fringe field junctions is presented. Low carrier absorption (1.3 dB/mm) and Vπ L (1.8 V-cm) are demonstrated. The measured modulation speed and depth are 11.8-GHz and 8-dB.
- Title
- High speed Si modulators with high modulation efficiency and low free carrier absorption by depleting carriers through fringe field junctions
- Creators - without role
- Kai-Ning Ku - National Tsing Hua UniversityMing-Chang M. Lee - Institute of Photonics Technologies, Dept. of Electrical Engineering, National Tsing Hua University
- Publication Details
- Conference on Lasers and Electro-Optics Europe - Technical Digest, Vol.2014-January, 6989827
- Identifiers
- 9957768660906774
- Academic Unit
- Institute of Photonics Technologies, College of Electrical Engineering and Computer Science, National Tsing Hua University
- Language
- English
- Resource Type
- Conference paper