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High speed and low power silicon-based receiver front-end for optical interconnect
Conference paper

High speed and low power silicon-based receiver front-end for optical interconnect

Shen-Wen Chen, Po-Wei Chiu, Yan-Feng Li, Shawn S. H. Hsu, K. Li, D.J. Thomson and G.T. Reed
IEEE International Conference on Group IV Photonics GFP, Vol.2016-November, pp.184-185
11/2016
DOI: https://doi.org/10.1109/GROUP4.2016.7739088

Abstract

CMOS Ge-on-Si PD optical interconnect (OI) receiver front-end Transimpedance amplifier (TIA) Electrical and Electronic Engineering Ceramics and Composites Electronic Optical and Magnetic Materials
We demonstrate an optical receiver front-end using a CMOS TIA with a germanium-on-silicon PD. The amplifier only occupies 0.09 mm 2 with 12 mW power consumption, and achieves a 27.5 GHz 3-dB bandwidth. The integrated silicon-based receiver shows well opened eye diagrams up to 20 Gb/s.

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