Abstract
Because of the superior material properties, silicon carbide (SiC) devices have drawn considerable attention in high power and high temperature applications. Promising performance has been demonstrated on both vertical and lateral devices [1] - [3]. In this paper, we report the performance of high voltage lateral 4H-SiC JFETs built on a semi-insulating substrate. The drift region design is based on charge compensation of the n-and p-type materials. The best achieved breakdown voltage is 3510 V, which is the highest value ever published for SiC lateral switching devices. R on, sp is 390 mΩ-cm 2 , resulting in a BV 2 /R on, sp of 32 MW/cm 2 . © 2009 IEEE.