Abstract
A highly reliable HfZrOx FRAM technology showing endurance up to 10 {12} cycles and 10 {10} cycles at 27°C and 120°C, respectively, in a scaled cell area of 0.36 mu mathrm{m}{2} has been demonstrated. The improved endurance is accomplished through barrier layer engineering of inserting TiON and 400°C post-metal annealing. Furthermore, wake-up-free 4 Kb 1T1C FRAM test chips show an extremely high initial yield of >98% across a wafer. The robust high-temperature reliability and high-yield array demonstrate high promise for future applications in automobile electronics.