- Title
- Highly Reliable and High-Yield 1.2V HfZrOx FRAM and its Physical Origin via Micrometer-Scale Nanocrystalline Domain Analysis
- Creators - without role
- 世杰 張
- Publication Details
- Technical Digest - International Electron Devices Meeting, IEDM
- Identifiers
- 9957771916706774
- Academic Unit
- Department of Computer Science, College of Electrical Engineering and Computer Science, National Tsing Hua University
- Language
- English
- Resource Type
- Conference paper
Conference paper
Highly Reliable and High-Yield 1.2V HfZrOx FRAM and its Physical Origin via Micrometer-Scale Nanocrystalline Domain Analysis
Technical Digest - International Electron Devices Meeting, IEDM
2024
Related links
Metrics
1 Record Views