Abstract
Carbon-tetrabromide (CBr 4 ) is utilized as the p-type doping source in modulation-doped pseudomorphic In 0.3 Ga 0.7 Sb/ Al x Ga 1-x Sb quantum well structure. Carbon delta-doping is achieved by switching off group III elements while the flow of CBr 4 is on during the growth of AlSb barrier layer. The hole mobility of strained In 0.3 Ga 0.7 Sb quantum well decreases monotonically from 600 to 400 cm 2 /V s while the sheet carrier concentration increases from 7.5× 10 11 to 4.1× 10 12 cm -2 with increasing carbon delta-doping. © 2010 American Vacuum Society.