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Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for V<inf>th</inf> matching and CMOS-compatible 3DFETs
Conference paper

Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for Vth matching and CMOS-compatible 3DFETs

Min-Cheng Chen, Chia-Yi Lin, Kai-Hsin Li, Lain-Jong Li, Chang-Hsiao Chen, Cheng-Hao Chuang, Ming-Dao Lee, Yi-Ju Chen, Yun-Fang Hou, Chang-Hsien Lin, …
Technical Digest - International Electron Devices Meeting, IEDM, Vol.2015-February(February), pp.33.5.1-33.5.4
02/2015
DOI: https://doi.org/10.1109/IEDM.2014.7047163
Appears in  keyword about Physics

Abstract

Electronic Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering Materials Chemistry
Stackable 3DFETs such as FinFET using hybrid Si/MoS2 channels were developed using a fully CMOS-compatible process. Adding several molecular layers (3-16 layers) of the transition-metal dichalcogenide (TMD), MoS2 to Si fin and nanowire resulted in improved (+25%) Ion,n of the FinFET and nanowire FET (NWFET). The PFETs also operated effectively and the N/P device Vth are low and matched perfectly. The proposed heterogeneous Si/TMD 3DFETs can be useful in future electronics.

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