I-V characteristics of thin gate oxide on MOS structure with laser annealing on the poly-silicon gate

Conference paper

Chih T'sung Shih, Yu Heng Tzeng, Zhi Wei Zeng, Yao-Jen Lee and Shiuh Chao

The 15th Symposium on Nano Device Technology 2008 (SNDT)

2008

Abstract

I-V characteristics;thin gate oxide;MOS structure;laser annealing;poly-silicon gate

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Title: I-V characteristics of thin gate oxide on MOS structure with laser annealing on the poly-silicon gate
Creators - without role: Chih T'sung Shih
Yu Heng Tzeng
Zhi Wei Zeng
Yao-Jen Lee
Shiuh Chao - 國立清華大學電機資訊學院電機工程學系
Publication Details: The 15th Symposium on Nano Device Technology 2008 (SNDT)
Identifiers: 9957776446406774
Academic Unit: College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper