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Impact of Ge oxidation states in GeOx interfacial layer on electrical characteristics of Ge pMOSFETs
Conference paper

Impact of Ge oxidation states in GeOx interfacial layer on electrical characteristics of Ge pMOSFETs

Shih-Han Yi, Kuei-Shu Chang-Liao, Chia-Wei Hsu, Jiayi Huang and Tzung-Yu Wu
2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018, pp.1-2
07/2018
DOI: https://doi.org/10.1109/VLSI-TSA.2018.8403823

Abstract

Electrical and Electronic Engineering Instrumentation Electronic Optical and Magnetic Materials
Effects of Ge oxidation states in GeO x interfacial layer (IL) on electrical characteristics of Ge pMOSFET with ~ 0.5 nm EOT are comprehensively studied. The gate leakage current density (J G ) is impacted by contents of Ge +1 and Ge +2 in GeO x IL. The hole mobility is influenced by content of Ge +3 in GeO x IL. The Ge oxidation states in IL play crucial roles on Ge pMOSFET.

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