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Impact of High-K Deposition Process on the Noise Immunity of FeFETs and their Applicability Towards In-Memory-Computing
Conference paper

Impact of High-K Deposition Process on the Noise Immunity of FeFETs and their Applicability Towards In-Memory-Computing

Yannick Raffel, Ricardo Olivo, Maximilian Lederer, Luca Pirro, Vivek Parmar, Talha Chohan, David Lehninger, Sourav De, Thomas Kampfe, Konrad Seidel, …
IEEE International Integrated Reliability Workshop Final Report
2023
DOI: https://doi.org/10.1109/IIRW59383.2023.10477638

Abstract

and interface treatments FeFET Flicker noise hafnium oxide In-memory computing interface traps Electrical and Electronic Engineering Safety Risk Reliability and Quality Electronic Optical and Magnetic Materials
This article reports the impact of the high-k material deposition process on the low-frequency noise and reliability of hafnium oxide-based (HfO 2 ) ferroelectric field-effect transistors (FeFET). A significant influence of the deposition method on the defect densities and, subsequently, on the low-frequency noise of FeFETs was observed. Furthermore, a correlation with the reliability behavior was found, and improved pathways were identified. Finally, the impact of the FeFET's reliability on in-memory-computing (IMC) applications was simulated.

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