Abstract
Recently, binary oxide based resistive memory exhibits a large sensing margin, low power, and high speed as a promising candidate for the next generation nonvolatile memory [1,2]. The compliance current (I C ) is required for the device under forming/SET step to prevent the permanent damage. The extraordinarily high current overshoot, attributed to the effect of parasitic capacitance during the forming/SET operation, is addressed [3,4]. The correlation between the I C and maximum RESET current (I RESET, max ) is also disclosed [5]. However, the influence of I C and the current overshoot on the resistance of high resistance state (R HIGH ) and the stability during endurance are less addressed. In addition, the impact of the thickness of insulator on the current overshoot with an identical Ic for the bipolar resistive device has not yet been studied. © 2011 IEEE.