Abstract
Stress distributions in the In 0.53 Ga 0.47 As channel regions of the In 0.4 Ga 0.6 As source/drain (S/D) with various lengths and widths were studied with 3D ANSYS simulations. The resulting mobility improvement was analyzed. Tensile stress along the transport direction was found to dominate mobility improvement. Stress along the vertical direction perpendicular to the gate oxide was found to affect mobility the least. However, for strained InGaAs NMOSFETs with width between 0.5 and 3 μm, the compressive stress along the width direction makes considerable contribution to mobility improvement and cannot be neglected. The impact of width on performance improvements such as the mobility gain was analyzed with TCAD simulations. © 2010 Published by Elsevier B.V. All rights reserved.