Impacts of HfO2/SiN trapping layer and in-situ doped poly-Si channel on 3D stacked junctionless flash memory device

Conference paper

Kuan-Chi Chou, Kuei-Shu Chang-Liao, Chun-Yuan Chen and Po-Hao Chen

2014

Abstract

HfO2/SiN trapping layer;in-situ;poly-Si channel;3D stacked junctionless flash memory device

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Title: Impacts of HfO2/SiN trapping layer and in-situ doped poly-Si channel on 3D stacked junctionless flash memory device
Creators - without role: Kuan-Chi Chou
Kuei-Shu Chang-Liao - 國立清華大學原子科學院工程與系統科學系
Chun-Yuan Chen
Po-Hao Chen
Identifiers: 9957772583406774
Academic Unit: Institute of Nuclear Engineering and Science, College of Nuclear Science, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper