Impacts of Lateral Migration on Threshold Voltage Shiftfor Charge Trapping Flash Memory Cells

Conference paper

Ji-Ting Liang, Chun-Hsing Shih and Chenhsin Lien

International Electron Devices and Materials Symposium, p.36

2007

Abstract

Lateral Migration;Flash Memory Cells

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Title: Impacts of Lateral Migration on Threshold Voltage Shiftfor Charge Trapping Flash Memory Cells
Creators - without role: Ji-Ting Liang
Chun-Hsing Shih
Chenhsin Lien - 國立清華大學電機資訊學院電機工程學系
Publication Details: International Electron Devices and Materials Symposium, p.36
Identifiers: 9957770161606774
Academic Unit: College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper