Improved Erasing Speed in Junctionless Flash Memory Device by Bandgap-Engineered Trapping Layer

Chun-Yuan Chen; Wei-Chieh Chen; Kuei-Shu Chang-Liao; Zong-Hao Ye; Kuen-Te Wu; Tien-Ko Wang

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Conference paper

Improved Erasing Speed in Junctionless Flash Memory Device by Bandgap-Engineered Trapping Layer

Chun-Yuan Chen, Wei-Chieh Chen, Kuei-Shu Chang-Liao, Zong-Hao Ye, Kuen-Te Wu and Tien-Ko Wang

ISDRS 2013 ISDRS 2013

2013

Abstract

Erasing Speed;Junctionless Flash Memory Device;Bandgap-Engineered;Trapping Layer

Operation characteristics of inversion-mode (IM) and junctionless (JL) polycrystalline-Si (poly-Si) flash memory device with HfO2/Si3N4 (HN) bandgap-engineered trapping layer (BETL) are studied and compared in this work. JL device shows faster programming speed than the IM one because of its heavily doped n-channel. Specially, comparable erasing speed of JL device can be achieved by HN BETL due to more effective electron de-trapping. JL device with HN BETL also shows better retention characteristics and keeps a larger window after 105 programming/erasing cycles

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Title: Improved Erasing Speed in Junctionless Flash Memory Device by Bandgap-Engineered Trapping Layer
Creators - without role: Chun-Yuan Chen
Wei-Chieh Chen
Kuei-Shu Chang-Liao - 國立清華大學原子科學院工程與系統科學系
Zong-Hao Ye
Kuen-Te Wu
Tien-Ko Wang
Publication Details: ISDRS 2013 ISDRS 2013
Identifiers: 9957771707806774
Academic Unit: Institute of Nuclear Engineering and Science, College of Nuclear Science, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper

Improved Erasing Speed in Junctionless Flash Memory Device by Bandgap-Engineered Trapping Layer

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