Improved Operation Characteristics in Charge-Trapping Flash Memory Devices with Engineered Dielectric Stack, SiGe and Junctionless Poly-Si Channels

Conference paper

Kuei-Shu Chang-Liao, Zong-Hao Ye, Li-Jung Liu and Chun-Yuan Chen

224th ECS Meeting 224th ECS Meeting

2013

Abstract

Operation Characteristics;Charge-Trapping;Flash Memory Devices;Dielectric Stack;SiGe;Junctionless Poly-Si Channels

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Title: Improved Operation Characteristics in Charge-Trapping Flash Memory Devices with Engineered Dielectric Stack, SiGe and Junctionless Poly-Si Channels
Creators - without role: Kuei-Shu Chang-Liao - 國立清華大學原子科學院工程與系統科學系
Zong-Hao Ye
Li-Jung Liu
Chun-Yuan Chen
Publication Details: 224th ECS Meeting 224th ECS Meeting
Identifiers: 9957777648206774
Academic Unit: Institute of Nuclear Engineering and Science, College of Nuclear Science, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper