Improved Operation Characteristics of Poly-Ge Nanowire Junctionless Charge-Trapping Flash Memory Devices with SiN/HfO2 Stacked Trapping Layer

Conference paper

Pei-Gang Wu, Kuei-Shu Chang-Liao, Hsin-Kai Fang, Tzu-Cheng Chao, Wen-Hsien Huang, Chang-Hong Shen and Jia-Min Hsieh

2016

Abstract

Operation Characteristics;Poly-Ge Nanowire;Junctionless Charge-Trapping;Flash Memory Devices;SiN/HfO2

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Title: Improved Operation Characteristics of Poly-Ge Nanowire Junctionless Charge-Trapping Flash Memory Devices with SiN/HfO2 Stacked Trapping Layer
Creators - without role: Pei-Gang Wu
Kuei-Shu Chang-Liao - 國立清華大學原子科學院工程與系統科學系
Hsin-Kai Fang
Tzu-Cheng Chao
Wen-Hsien Huang
Chang-Hong Shen
Jia-Min Hsieh
Identifiers: 9957773705906774
Academic Unit: Institute of Nuclear Engineering and Science, College of Nuclear Science, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper