Improved Programming and Erasing Speeds of Poly-Si Flash Memory Device by HfO2/SiN Bandgap-Engineered Trapping Layer

Conference paper

Chun-Yuan Chen, Kuei-Shu Chang-Liao, Hao-Wei Ho and Tien-Ko Wang

2013

Abstract

Programming and Erasing Speeds;Poly-Si;Flash Memory Device;HfO2/SiN;Bandgap-Engineered Trapping Layer

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Title: Improved Programming and Erasing Speeds of Poly-Si Flash Memory Device by HfO2/SiN Bandgap-Engineered Trapping Layer
Creators - without role: Chun-Yuan Chen
Kuei-Shu Chang-Liao - 國立清華大學原子科學院工程與系統科學系
Hao-Wei Ho
Tien-Ko Wang
Identifiers: 9957767079206774
Academic Unit: Institute of Nuclear Engineering and Science, College of Nuclear Science, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper