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Improved growth of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatments
Conference paper   Peer reviewed

Improved growth of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatments

S.W. Lee, L.J. Chen, P.S. Chen, M.-J. Tsai, C.W. Liu, W.Y. Chen and T.M. Hsu
Applied Surface Science, Vol.224(1-4), pp.152-155
03/2004
DOI: https://doi.org/10.1016/j.apsusc.2003.08.098
Appears in  keyword about Physics

Abstract

Cone-shaped defects Ge Intermixing Multilayers Self-assembled quantum dots Chemistry (all) Condensed Matter Physics Physics and Astronomy (all) Surfaces and Interfaces Surfaces Coatings and Films
The pre-intermixing treatments of Ge quantum dots (QDs) were demonstrated to be effective in improving the size uniformity and preventing the formation of cone-shaped defects (CSD) in the Ge dots multilayers. The rapid decrease in density of Ge dots with the number of layers is also alleviated. The strain relaxation of Si/Ge multifold layers is characterized by rocking curves. The pre-intermixed Ge dots have a stronger photoluminescence intensity due to a higher Ge dots density and a lower cone-shaped defect density. The results indicate that pre-intermixing treatment of Ge quantum dots is a promising technique for the fabrication of emitters and detectors in Si-based optoelectronic devices. © 2003 Elsevier B.V. All rights reserved.

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