Improved trap-related characteristics on SiNx/AlGaN/GaN MISHEMTs with surface treatment

Yu-Syuan Lin; King-Yuen Wong; G.P. Lansbergen; J.L. Yu; C.J. Yu; C.W. Hsiung; H.C. Chiu; S.D. Liu; P.C. Chen; F.W. Yao; R.Y. Su; C.Y. Chou; C.Y. Tsai; F.J. Yang; C.L. Tsai; C.S. Tsai; X. Chen; H.C. Tuan; Alex Kalnitsky

doi:10.1109/ISPSD.2014.6856034

Conference paper

Improved trap-related characteristics on SiNx/AlGaN/GaN MISHEMTs with surface treatment

Yu-Syuan Lin, King-Yuen Wong, G.P. Lansbergen, J.L. Yu, C.J. Yu, C.W. Hsiung, H.C. Chiu, S.D. Liu, P.C. Chen, F.W. Yao, …

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, pp.293-296

2014

DOI: https://doi.org/10.1109/ISPSD.2014.6856034

Abstract

Engineering (all)

In this paper, the reliable SiN _x /AlGaN/GaN MISHEMTs on silicon substrate with improved trap-related characteristics have been well demonstrated. The devices with our proposed treatment method showed less deep-level traps and more Si surface donors at SiN _x -AlGaN interface. The trap related device characteristics are also improved by using our optimized treatment method. The devices with proposed treatment method exhibit less current collapse and better positive bias temperature stability of threshold voltage. All the results suggest that the proposed treatment method is very effective to improve the slow-trap related device reliability. © 2014 IEEE.

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Title: Improved trap-related characteristics on SiNx/AlGaN/GaN MISHEMTs with surface treatment
Translated title: Improved trap-related characteristics on SiNx/AlGaN/GaN MISHEMTs with surface treatment
Creators - without role: Yu-Syuan Lin - Power IC Program, Analog / RF and Specialty Technology Division (R and D), Taiwan Semiconductor Manufacturing Company, Ltd.
King-Yuen Wong - Power IC Program, Analog / RF and Specialty Technology Division (R and D), Taiwan Semiconductor Manufacturing Company, Ltd.
G.P. Lansbergen - Taiwan Semiconductor Manufacturing Company (Taiwan)
J.L. Yu - Taiwan Semiconductor Manufacturing Company (Taiwan)
C.J. Yu - Taiwan Semiconductor Manufacturing Company (Taiwan)
C.W. Hsiung - Taiwan Semiconductor Manufacturing Company (Taiwan)
H.C. Chiu - Taiwan Semiconductor Manufacturing Company (Taiwan)
S.D. Liu - Taiwan Semiconductor Manufacturing Company (Taiwan)
P.C. Chen - Taiwan Semiconductor Manufacturing Company (Taiwan)
F.W. Yao - Taiwan Semiconductor Manufacturing Company (Taiwan)
R.Y. Su - Taiwan Semiconductor Manufacturing Company (Taiwan)
C.Y. Chou - Power IC Program, Analog / RF and Specialty Technology Division (R and D), Taiwan Semiconductor Manufacturing Company, Ltd.
C.Y. Tsai - Taiwan Semiconductor Manufacturing Company (Taiwan)
F.J. Yang - Taiwan Semiconductor Manufacturing Company (Taiwan)
C.L. Tsai - Taiwan Semiconductor Manufacturing Company (Taiwan)
C.S. Tsai - Taiwan Semiconductor Manufacturing Company (Taiwan)
X. Chen - Taiwan Semiconductor Manufacturing Company (Taiwan)
H.C. Tuan - Taiwan Semiconductor Manufacturing Company (Taiwan)
Alex Kalnitsky - Taiwan Semiconductor Manufacturing Company (Taiwan)
Publication Details: Proceedings of the International Symposium on Power Semiconductor Devices and ICs, pp.293-296
Identifiers: 9781479929177; 9957771902906774
Academic Unit: Institute of Electronics Engineering, College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: English
Resource Type: Conference paper

Improved trap-related characteristics on SiNx/AlGaN/GaN MISHEMTs with surface treatment

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