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Improvement of AlAs- GaAs interface roughness grown with high As-overpressures
Conference paper

Improvement of AlAs- GaAs interface roughness grown with high As-overpressures

D. E. Wohlert, K. L. Chang, K. C. Hsieh and K. Y. Cheng
18th North American Conference on Molecular Beam Epitaxy
1999

Abstract

AlAs- GaAs;As-overpressures

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