Improvement on the memory effect by incorporating high-k dielectrics with metal-silicide nanocrystal

Conference paper

Improvement on the memory effect by incorporating high-k dielectrics with metal-silicide nanocrystal

J. Y. Lin, Y. D. Chen, Y. C. Yu, T. C. Chang and W. F. Wu

2009

Abstract

memory effect;incorporatin;high-k dielectrics;metal-silicide nanocrystal

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Title: Improvement on the memory effect by incorporating high-k dielectrics with metal-silicide nanocrystal
Creators - without role: J. Y. Lin
Y. D. Chen
Y. C. Yu
T. C. Chang
W. F. Wu - 國立清華大學原子科學院工程與系統科學系
Identifiers: 9957767551106774
Academic Unit: Department of Engineering and System Science, College of Nuclear Science, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper