Abstract
InP/GaAs 0.51 Sb 0.49 /InP DHBT (Double Heterojunction Bipolar Transistor) technology is investigated and presented for low power consumption and high power microwave amplification. A low power monolithic transimpedance circuit using InP/GaAsSb/ InP DHBTs presented a 11.0dB gain, 9.5GHz bandwidth, 46dBΩ transimpedance, and a corresponding gain-bandwidth of 1.88THz-Ω. The power characteristics of the DHBT devices have not been discussed extensively in the past and are shown here to present large 1dB-compressed output power corresponding to 0.76mW/μm 2 at 5GHz and high efficiency due to the use of an InP collector. This opens the possibility for transimpedance amplifier use in applications where an input signal with large dynamic range may be present.