Incorporation of interstitial carbon during growth of heavily carbon-dopeed GaAs by MOCVD and MOMBE

Conference paper

G. E. Hofler, J. N. Baillargeon, J. R. Klatt, K. C. Hsieh, K. Y. Cheng and R. S. Averback

1991 international symposium on GaAs and related compounds

1991

Abstract

interstitial carbon;heavily carbon-dopeed;GaAs;MOCVD;MOMBE

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Title: Incorporation of interstitial carbon during growth of heavily carbon-dopeed GaAs by MOCVD and MOMBE
Creators - without role: G. E. Hofler
J. N. Baillargeon
J. R. Klatt
K. C. Hsieh
K. Y. Cheng
R. S. Averback
Publication Details: 1991 international symposium on GaAs and related compounds
Identifiers: 9957767153006774
Academic Unit: National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper