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Increasing VG-type 3D NAND flash cell density by using ultra-thin poly-silicon channels
Conference paper

Increasing VG-type 3D NAND flash cell density by using ultra-thin poly-silicon channels

Teng-Hao Yeh, Pei-Ying Du, Tzu-Hsuan Hsu, Wei-Chen Chen, Hang-Ting Lue, Yen-Hao Shih, Yu-De Huang, Han-Hui Hsu, Lo-Yueh Lin, Ya-Chin King, …
2013 5th IEEE International Memory Workshop, IMW 2013, pp.139-142
2013
DOI: https://doi.org/10.1109/IMW.2013.6582118

Abstract

BE-SONOS charge trapping ultra-thin TFT device VG-type 3D NAND Flash
Z-direction pitch (stacking period) scaling is critical to the ultimate number of stacking of 3D NAND Flash. In this work, we study the ultra-thin (<10nm) poly-Si channel together with a thinner inter-poly oxide for Vertical Gate (VG)-type 3D NAND Flash. For the first time, the Z pitch is successfully scaled to 18nm and the memory cell still provides adequate performance. The impact of the Z pitch on the P/E memory window, Z disturb, and read current are studied extensively. © 2013 IEEE.

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