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Inhibiting AuSn 4 formation by controlling the interfacial reaction in solder joints
Conference paper   Peer reviewed

Inhibiting AuSn 4 formation by controlling the interfacial reaction in solder joints

Li-Yin Hsiao, Guh-Yaw Jang, Kai-Jheng Wang and Jenq-Gong Duh
Journal of Electronic Materials, Vol.36(11), pp.1476-1482
11/2007

Abstract

Au coating Gibbs free energy Interfacial reaction Intermetallic compound Solder joint
Au was used in an electronic package to protect the conductor from oxidation. However, Au dissolved into solders and reacted with the Sn-rich phase to form AuSn 4 during soldering. After aging, Au diffused from AuSn 4 toward the solder/metallization interface. If Ni 3 Sn 4 formed at the soldering interface, a layer of AuSn 4 was redeposited on Ni 3 Sn 4 . In contrast, Au diffused into Cu 6 Sn 5 -based intermetallic compounds (IMCs) to produce either (Cu,Au) 6 Sn 5 or (Cu,Ni,Au) 6 Sn 5 , while Cu 6 Sn 5 or (Cu,Ni) 6 Sn 5 was formed at the soldering interface. Gibbs free energy evaluation revealed that both (Ni,Au) 3 Sn 4 and (Cu,Au) 6 Sn 5 were more thermodynamically stable than AuSn 4 . The maximum amount of Au diffused in Ni 3 Sn 4 was 4.6 at.%, while the maximum dissolution of Au in Cu 6 Sn 5 was 24.3 at.% at 150°C. Thus, dissolution of Au in Ni 3 Sn 4 was limited, and residual Au rereacted with Sn to produce the layer-type AuSn 4 . If Cu 6 Sn 5 formed at the interface, most of the Au in AuSn 4 diffused into Cu 6 Sn 5 . Consequently, AuSn 4 formation could be inhibited by controlling formation of Cu 6 Sn 5 in solder/under-bump metallization (UBM) assemblies. © 2007 TMS.

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