Initial growth of Ga2O3(Gd2O3) on GaAs – Key to the attainment of a low interfacial density of states

Conference paper

M. Hong, Z. H. Lu, J. Kwo, A. R. Kortan, J. P. Mannaerts, K. C. Hsieh, K. Y. Cheng and M. T. Tang

18th North American Conference on Molecular Beam Epitaxy

1999

Abstract

Initial growth;Ga2O3(Gd2O3);GaAs;attainment;low interfacial density

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Title: Initial growth of Ga2O3(Gd2O3) on GaAs – Key to the attainment of a low interfacial density of states
Creators - without role: M. Hong
Z. H. Lu
J. Kwo
A. R. Kortan
J. P. Mannaerts
K. C. Hsieh
K. Y. Cheng
M. T. Tang
Publication Details: 18th North American Conference on Molecular Beam Epitaxy
Identifiers: 9957768866306774
Academic Unit: National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper