Integrity of metal control gate and high-k Al2O3 inter-poly dielectric in flash memory cells with top oxide layer

Conference paper

Y. M. Peng, C. H. Shih, S. H. Yang, W. Chang and W. F. Wu

Symposium on Nano Device Technology Symposium on Nano Device Technology

2009

Abstract

metal control gate;high-k Al2O3 inter-poly dielectric;flash memory

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Title: Integrity of metal control gate and high-k Al2O3 inter-poly dielectric in flash memory cells with top oxide layer
Creators - without role: Y. M. Peng
C. H. Shih
S. H. Yang
W. Chang
W. F. Wu - 國立清華大學原子科學院工程與系統科學系
Publication Details: Symposium on Nano Device Technology Symposium on Nano Device Technology
Identifiers: 9957775406106774
Academic Unit: Department of Engineering and System Science, College of Nuclear Science, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper