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Interconnect capacitance characterization using charge-injection-induced error-free (CIEF) charge-based capacitance measurement (CBCM)
Conference paper   Peer reviewed

Interconnect capacitance characterization using charge-injection-induced error-free (CIEF) charge-based capacitance measurement (CBCM)

Yao-Wen Chang, Hsin-Wen Chang, Tao-Cheng Lu, Ya-Chin King, Wenchi Ting, Yen-Hui Joseph Ku and Chih-Yuan Lu
IEEE Transactions on Semiconductor Manufacturing, Vol.19(1), pp.50-55
02/2006
DOI: https://doi.org/10.1109/TSM.2005.863228

Abstract

Capacitance measurement Charge injection Charge-based capacitance measurement (CBCM) Interconnect capacitance
In this work, we describe a novel operation of charge-injection-induced error-free charge-based capacitance measurement (CIEF CBCM) method. This method has the simplest test structure among various CBCM methods by using only one N/PMOS pair. CIEF CBCM has the advantage of being free from charge-injection- induced errors and of efficient layout area usage. It is very suitable for industrial applications for large amounts of accurate capacitance characterizations with a limited layout area. Besides, CIEF CBCM is also implemented for investigating the impact of floating dummy metal fills on interconnect capacitance directly from silicon data. © 2006 IEEE.

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