Abstract
The initial stages of NH 3 exposure on Si (100) & (111) at different substrate temperatures and post annealing in different ambient gases have been investigated. On the Si (100) surface, at 850 °C and very high (∼1050 °C) temperatures, NH 3 dissociated and nitridized the Si interface. The degree of nitride crystallization has been enhanced at elevated temperature (∼1050 °C). The interfacial trapped density is lower at higher temperature. I-V measurements indicated that the electrical properties are improved as the substrate temperature is raised. The results were directly related to the better interfacial registry. For the Si(111) substrate, the trends are similar to Si(100), but are more prominent.