Abstract
The resistive switching effect in Zn x Ti y Hf z O i nanocomposite film, grown by pulsed laser deposition technique, was investigated. It was shown that Zn x Ti y Hf z O i film surface had a granular structure with 0.8±0.4 μm 2 grain size and 7.3±5.1 nm grain height. Resistive switching from high resistance state (HRS) to low resistance state (LRS) was occurred at 0.9±0.4 V, and from LRS to HRS at 1.5±0.2 V. HRS/LRS ratio was 2.6. The results can be used for nanocomposite-metal-oxide-film RRAM fabrication.