Logo image
Investigation of the current stability of AlGaN/GaN high electron mobility transistors in various liquid/solid interface on the gate area
Conference paper

Investigation of the current stability of AlGaN/GaN high electron mobility transistors in various liquid/solid interface on the gate area

Jung-Ying Fang, Chen-Pin Hsu, Yen-Wen Kang, Kuan Chung Fang, Fan Ren and Yu-Lin Wang
ECS Transactions, Vol.58(8), pp.3-7
2013

Abstract

Engineering (all)
Variation of temperature, pressure, and pH values has been demonstrated for affecting the stability of AlGaN/GaN HEMTs sensors. In addition to the factors above mentioned, we found out other factors which are related to the stability of AlGaN/GaN HEMTs sensors. In this study, we found out the current variation of AlGaN/GaN HEMTs without gate metal sensors is inversely proportional to the viscosity of liquids. We also found out that dipole moment of liquids is related to the current variation of AlGaN/GaN HEMTs without gate metal sensors. © The Electrochemical Society.

Metrics

1 Record Views

Details

Logo image