Abstract
We report picosecond switching responses for photoconductive switches fabricated on annealed arsenic-ion-implanted GaAs at dosage as low as 1013 ions/cm2.
- Title
- Investigations of GaAs Implanted with Low-Dosage Arsenic Ions as Ultrafast Photoconductors
- Translated title
- Investigations of GaAs Implanted with Low-Dosage Arsenic Ions as Ultrafast Photoconductors
- Creators - without role
- Gong-Ru Lin - Institute of Electro-Optical Engineering , National Chiao Tung UniversityCi-Ling Pan - Institute of Electro-Optical Engineering , National Chiao Tung University
- Identifiers
- 9781557528209; 9957768602006774
- Copyright
- © 1997 Optical Society of America.
- Academic Unit
- National Tsing Hua University
- Language
- English
- Resource Type
- Conference paper
- Publication Details
- Optics InfoBase Conference Papers, pp.116-118